Win Source Electronics Srl Via Altabella 17 - 40125 Bologna - Bologna Telefono: 68659377 | Fax: Partita IVA: 13845280968 http://www.reteimprese.it/221502 it-IT Tue, 18 Aug 2026 20:18:23 +0200 Tue, 18 Aug 2026 20:18:23 +0200 http://blogs.law.harvard.edu/tech/rss Reteimprese publishing script http://www.reteimprese.it/pro_A221502B691641 Tue, 18 Aug 2026 20:18:23 +0200 http://www.reteimprese.it/pro_A221502B691641 The Nexperia USA Inc. PMEG4010EH, 115 is a Schottky diode with SMD (SMT) mounting. Mounting Type: SMD (SMT) Maximum Reverse Voltage: 40V Average Rectified Current: 1A (DC) Forward Voltage: 640mV @ 1A Reverse Leakage Current: 100μA @ 40V Capacitance: 50pF @ 1V and 1MHz Operating Temperature Range: -40°C to 150°C Package: SOD-123F EUR 0.00 October 17, 2026 ]]> Discrete Semiconductor Products http://www.reteimprese.it/pro_A221502B691640 Tue, 18 Aug 2026 20:18:23 +0200 http://www.reteimprese.it/pro_A221502B691640 Introducing the BCP5616QTA - A Robust NPN Bipolar Transistor from Diodes Incorporated The BCP5616QTA is a high-performance NPN bipolar (BJT) transistor designed and manufactured by the renowned semiconductor company, Diodes Incorporated. This versatile electronic component is specifically engineered to deliver efficient current regulation and amplification in a wide array of applications, making it a go-to choice for designers and engineers in the electronics industry. At the heart of the BCP5616QTA lies its ability to handle moderate power levels while maintaining low saturation voltages, ensuring energy-efficient operation even under demanding conditions. This feature is particularly beneficial in applications such as switch mode power supplies, motor control circuits, and various types of amplifiers where power efficiency is paramount. The BCP5616QTA boasts a collector-emitter voltage (Vceo) of 80V, which provides a comfortable margin for applications that experience voltage spikes or transients, thereby enhancing the reliability and longevity of the end product. Furthermore, its continuous collector current (Ic) rating of 1A makes it suitable for handling moderate power loads without compromising performance. One of the standout features of the BCP5616QTA is its hFE (DC current gain) characteristic, which ensures consistent gain performance over a wide range of operating conditions. This transistor is also characterized by its low noise figure, making it an excellent choice for audio amplification and other noise-sensitive applications. Diodes Incorporated has packaged the BCP5616QTA in a SOT-223 package, which not only provides a compact footprint for space-constrained designs but also offers excellent thermal performance. The robust package design, coupled with the transistor's inherent thermal stability, allows for reliable operation over a broad temperature range, making it suitable for industrial and automotive environments. In summary, the BCP5616QTA from Diodes Incorporated is a high-quality NPN bipolar transistor that offers a balance of power handling, efficiency, and reliability. Its versatile characteristics and robust package make it an ideal choice for a wide range of electronic applications, from power management to signal amplification. EUR 0.00 October 17, 2026 ]]> Discrete Semiconductor Products http://www.reteimprese.it/pro_A221502B691639 Tue, 18 Aug 2026 20:18:23 +0200 http://www.reteimprese.it/pro_A221502B691639 The Murata Electronics Ceramic Capacitor is a high-quality capacitor from the GRM series. Bold the product name (e.g., BAV99S, 135 → Ceramic Capacitor ) and manufacturer (e.g., Nexperia USA Inc. → Murata Electronics ). Series: GRM series Capacitance: 10 μF Tolerance: ±10% Voltage Rating: 16V Temperature Coefficient: X5R Product Status: Active EUR 0.00 October 17, 2026 ]]> Capacitors http://www.reteimprese.it/pro_A221502B691638 Tue, 18 Aug 2026 20:18:23 +0200 http://www.reteimprese.it/pro_A221502B691638 The SMMBTA56LT1G is a high-performance PNP bipolar junction transistor (BJT) from ON Semiconductor, designed for use in a wide range of electronic applications. This transistor is characterized by its low VCE(sat) and high current gain, making it an ideal choice for amplification and switching applications where efficiency is key. Key Features Device Type: PNP Bipolar Junction Transistor Configuration: Single Collector-Base Voltage (VCB): 80 V Collector-Emitter Voltage (VCE): 80 V Emitter-Base Voltage (VEB): 5 V Collector Current (IC): 500 mA Power Dissipation (PD): 225 mW DC Current Gain (hFE): 100 to 250 at 10 mA, 5 V Operating Temperature Range: -55°C to 150°C Mounting Style: Surface Mount Package / Case: SOT-23-3 RoHS: Compliant Applications The SMMBTA56LT1G is suitable for a variety of applications, including but not limited to: Power Management Circuits Signal Amplification Switching and Load Driving Linear Amplification and Active Filtering Consumer Electronics Telecommunication Systems Automotive Modules Quality and Reliability ON Semiconductor is known for its commitment to quality, and the SMMBTA56LT1G is no exception. This transistor is produced with high manufacturing standards, ensuring reliable performance in critical applications. It is also supported by ON Semiconductor's rigorous testing protocols, providing engineers with confidence in their designs. Environmental Compliance The SMMBTA56LT1G is a RoHS compliant component, adhering to the European Union's directive on the restriction of hazardous substances. This ensures that the transistor is free from lead, mercury, cadmium, and other harmful materials, making it suitable for use in environmentally-sensitive products. EUR 0.00 October 17, 2026 ]]> Discrete Semiconductor Products http://www.reteimprese.it/pro_A221502B691637 Tue, 18 Aug 2026 20:18:23 +0200 http://www.reteimprese.it/pro_A221502B691637 The BAS516 from NXP is a high-speed switching diode encapsulated in a ultra small and flat lead SOD523 (SC-79) Surface-Mounted Device (SMD) plastic package. It has a repetitive peak reverse voltage of 100V, an average forward current of 250mA, and a forward voltage of 1.25V at IF 150mA. It also has a low leakage current and a reverse recovery time of 4ns. The BAS516 is ideal for a wide range of applications, including: Power management Consumer electronics Portable devices Automotive Industrial Some specific examples of applications where the BAS516 can be used include: Flyback diodes in switch-mode power supplies Freewheeling diodes in motor control circuits Protection diodes in battery circuits Signal diodes in high-frequency circuits Clamping diodes in overvoltage protection circuits The BAS516 is also available in an automotive grade version, the BAS516A, which is qualified to AEC-Q101 standards. Here is a more detailed description of the key features and benefits of the BAS516: High switching speed: The BAS516 has a reverse recovery time of just 4ns, making it ideal for high-frequency applications. Low capacitance: The BAS516 has a low capacitance of 1pF, which minimizes switching losses and improves performance in high-frequency circuits. Low leakage current: The BAS516 has a low leakage current of 500nA, which helps to conserve battery power and improve efficiency in power management applications. Reverse voltage: The BAS516 has a reverse voltage of 100V, making it suitable for a wide range of applications. Small SMD plastic package: The BAS516 is available in a small SOD523 (SC-79) SMD plastic package, which makes it ideal for space-constrained applications. Overall, the BAS516 is a versatile and high-performance switching diode that is ideal for a wide range of applications. Here are some additional details about the BAS516: Operating temperature range: -65°C to 150°C Non repetitive peak forward surge current: 4A Power dissipation: 500mW Package dimensions: 1.6mm x 1.0mm x 0.7mm If you are looking for a high-speed, low-leakage switching diode in a small SMD package, then the BAS516 is a great option to consider. EUR 0.00 October 17, 2026 ]]> Discrete Semiconductor Products http://www.reteimprese.it/pro_A221502B691636 Tue, 18 Aug 2026 20:18:23 +0200 http://www.reteimprese.it/pro_A221502B691636 74HC595D, 118 from Nexperia USA Inc. is a logic shift register used in designs that need to expand digital outputs, simplify microcontroller interfacing, or serialize control signals for downstream logic. It is commonly considered for LED control, display modules, embedded systems, industrial control panels, and general digital electronics where board space and pin efficiency matter. Engineers often select parts in this category to reduce I/O pin usage while maintaining straightforward digital control architecture. For sourcing and design planning, this device fits applications that value widely used logic functionality from an established supplier. The reported lifecycle status for this specific ordering code is information not available, so teams should confirm current production status directly with Nexperia or an authorized channel before locking it into new designs. RoHS compliance details are also information not available in the provided data and should be verified against the latest manufacturer datasheet, compliance certificate, or distributor documentation before procurement. EUR 0.00 October 17, 2026 ]]> Integrated Circuits (ICs) http://www.reteimprese.it/pro_A221502B691635 Tue, 18 Aug 2026 20:18:23 +0200 http://www.reteimprese.it/pro_A221502B691635 This electronic component is a product of Murata Electronics North America . Component Type: Surface mount MLCC capacitor Capacitance: 0.1μF Voltage Rating: 10V Tolerance: ±10% Temperature Coefficient: X5R Thickness: 0.013" (0.33mm) Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm) Family: GRM Category: Capacitors Status: Active Temperature Range: -55°C to 85°C Estimated EOL Date: 2028 Popularity: High Supply and Demand Status: Sufficient EUR 0.00 October 17, 2026 ]]> Capacitors http://www.reteimprese.it/pro_A221502B691634 Tue, 18 Aug 2026 20:18:23 +0200 http://www.reteimprese.it/pro_A221502B691634 The Murata Electronics North America 020043-LQP03TN2N4B02D is a thin film inductor with the following specifications: Current Rating: 500mA Inductance: 2.4nH Tolerance: ±0.1nH DC Resistance (DCR): 200 mOhm Max Q @ Freq: 14 @ 500MHz Frequency - Self-Resonant: 10GHz Package: 0201 (0603 Metric), in a reel - TR form factor Operating Temperature Range: -55°C to 125°C EUR 0.00 October 17, 2026 ]]> Inductors http://www.reteimprese.it/pro_A221502B691633 Tue, 18 Aug 2026 20:18:23 +0200 http://www.reteimprese.it/pro_A221502B691633 The GRM033R60J105MEA2D is a Murata Electronics North America electronic component. Component Type: Surface Mount MLCC Capacitor Capacitance: 1μF Voltage Rating: 6.3V Popularity: Medium Supply and Demand Status: Balanced Temperature Range - Operating: -55°C to 85°C Tolerance: ±20% Temperature Coefficient: X5R Derating: Recommended Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm) Thickness (Maximum): 0.013" (0.33mm) Category: Capacitors Status: Active ? EUR 0.00 October 17, 2026 ]]> Capacitors